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Resistive Attenuator Calculator

Design simple resistive attenuator pads between equal impedances (e.g., 50 Ω systems). This tool computes resistor values for classic T (tee) and π (pi) pads given a target attenuation in dB and a characteristic impedance Z0.

Current version assumes equal source and load impedances (ZS = ZL = Z0). For impedance-transforming designs, see the Network Matching Tool.

Quick Overview
  • T-pad: two series arms with a shunt resistor between them.
  • π-pad: two shunt resistors with a single series resistor between ports.

All formulas assume resistive networks at the design impedance. Real components have tolerance, power limits, and frequency dependence. For high power, derate generously.

Input Parameters
Choose the resistor network style. Both assume ZS = ZL = Z0.
Typically 50 Ω for RF work (75 Ω, 600 Ω, etc. also supported).
Positive insertion loss (e.g., 3, 6, 10, 20 dB).

Power handling
Maximum RF power you expect to apply to the pad. Set to > 0 to compute resistor dissipation.
Multiplier on calculated resistor dissipation. For example, 50 % → design for 1.5× the computed power.

Formulas use standard equal-impedance pad equations with K = 10AdB/20 as the voltage ratio (Vin/Vout).
Results T attenuator schematic
Attenuation (AdB)
6.00 dB
Voltage ratio K = Vin / Vout
1.995
Power ratio Pin / Pout
3.981

T (tee) pad – equal impedances
Two series resistors R1 and R3 with a shunt resistor R2 between them, matched to Z0 on both ports.
R1 = R3 (series)
16.614 Ω
R2 (shunt to ground)
66.931 Ω

Input power Pin
10.00 W
Output power Pout (approx.)
2.68 W
Total pad dissipation
7.32 W

Resistor wattage (with safety margin)
Resistor Value (Ω) Dissipation (W) With margin (W) Suggested rating
R1 16.614 0.890 1.335 2 W
R2 66.931 5.543 8.314 10 W
R3 16.614 0.890 1.335 2 W

Power is approximate for sinusoidal RF at the specified Pin with matched terminations. For very high power or pulsed operation, add additional margin.

For higher power builds, consider using parallel resistors to reduce dissipation per element and improve thermal handling.